ARF461AG

ARF461AG

$50.34
  • Description:RF MOSFET 50V TO247
  • Series:-

SKU:9d2357d56c82 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 50V TO247
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:65MHz
  • Gain:15dB
  • Voltage - Test:50 V
  • Current Rating (Amps):25µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:150W
  • Voltage - Rated:1000 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Configuration:N-Channel

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ARF461AG

Overview

The ARF461AG is an N-channel silicon RF MOSFET transistor manufactured by Microchip Technology. It features a VDMOS structure with a drain-source breakdown voltage of 1 kV and a continuous drain current of 6.5 A. The device operates at frequencies up to 65 MHz, delivering 150 W of output power with a gain of 13 dB. It is housed in a TO-247-3 through-hole package and supports operating temperatures from -55°C to +150°C.

Feature Summary

  • High-voltage capability with 1 kV drain-source breakdown voltage for robust RF power applications.
  • Optimized for high-frequency operation up to 65 MHz with significant power gain.
  • Designed for thermal resilience with a maximum junction temperature rating of +150°C.

Applications

  • RF power amplification stages
  • Industrial radio frequency heating systems
  • Medical diathermy equipment

Procurement Notes

Verify the specific suffix 'AG' against the official Microchip datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid RoHS compliance documentation. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements before ordering.

Selection Notes

Select this component when designing circuits requiring high voltage isolation combined with moderate RF power output. The 1 kV rating suits high-voltage supply rails, while the 65 MHz bandwidth fits standard industrial RF bands. Evaluate thermal management needs given the 150 W power dissipation capability in the TO-247 package.

Part Context

This part belongs to the Microchip RF MOSFET transistor family, specifically utilizing VDMOS technology. It is categorized under discrete semiconductor devices designed for high-power radio frequency applications. The TO-247-3 package facilitates efficient heat dissipation for through-hole mounting in power electronics assemblies.

Replacement Considerations

Consult the official Microchip replacement guide or datasheet revision history for verified cross-reference part numbers. Do not substitute based on generic parameter matching alone; verify compatibility with the manufacturer's approved alternatives list.

FAQ

What is the maximum operating frequency for the ARF461AG?

The device is rated for operation at frequencies up to 65 MHz.

Does the ARF461AG support through-hole mounting?

Yes, it is available in a TO-247-3 package designed for through-hole installation.

What is the typical gain of this RF MOSFET?

The specified gain for the ARF461AG is 13 dB.

ARF461AGARF461AG
$50.34
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