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The ARF461AG is an N-channel silicon RF MOSFET transistor manufactured by Microchip Technology. It features a VDMOS structure with a drain-source breakdown voltage of 1 kV and a continuous drain current of 6.5 A. The device operates at frequencies up to 65 MHz, delivering 150 W of output power with a gain of 13 dB. It is housed in a TO-247-3 through-hole package and supports operating temperatures from -55°C to +150°C.
Verify the specific suffix 'AG' against the official Microchip datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid RoHS compliance documentation. Confirm that the TO-247-3 package dimensions match your PCB footprint requirements before ordering.
Select this component when designing circuits requiring high voltage isolation combined with moderate RF power output. The 1 kV rating suits high-voltage supply rails, while the 65 MHz bandwidth fits standard industrial RF bands. Evaluate thermal management needs given the 150 W power dissipation capability in the TO-247 package.
This part belongs to the Microchip RF MOSFET transistor family, specifically utilizing VDMOS technology. It is categorized under discrete semiconductor devices designed for high-power radio frequency applications. The TO-247-3 package facilitates efficient heat dissipation for through-hole mounting in power electronics assemblies.
Consult the official Microchip replacement guide or datasheet revision history for verified cross-reference part numbers. Do not substitute based on generic parameter matching alone; verify compatibility with the manufacturer's approved alternatives list.
The device is rated for operation at frequencies up to 65 MHz.
Yes, it is available in a TO-247-3 package designed for through-hole installation.
The specified gain for the ARF461AG is 13 dB.