ARF463AG

ARF463AG

$35.21
  • Description:RF MOSFET 125V TO247
  • Series:-

SKU:fb83418354a9 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 125V TO247
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tube
  • Technology:MOSFET (Metal Oxide)
  • Frequency:81.36MHz
  • Gain:15dB
  • Voltage - Test:125 V
  • Current Rating (Amps):9A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:100W
  • Voltage - Rated:500 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247
  • Configuration:N-Channel

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ARF463AG

Overview

The ARF463AG is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon technology and operates in a common source configuration within a TO-247 package. The device supports a drain-source voltage of 500 V, delivers 100 W output power at 100 MHz, and provides 13 dB gain. Continuous drain current is rated at 10 A, with a maximum junction temperature of +150 C.

Feature Summary

  • High-frequency operation capability up to 100 MHz for RF applications
  • Robust thermal performance supporting continuous operation at elevated temperatures
  • Designed for high-power amplification with significant output capability

Applications

  • RF power amplification circuits
  • Industrial radio frequency heating systems
  • Communication equipment transmitter stages

Procurement Notes

Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247 through-hole mounting style aligns with the target PCB or chassis design requirements. Ensure thermal management solutions meet the component's dissipation needs under operational load conditions.

Selection Notes

Select this component when designing circuits requiring 500 V breakdown and 100 W power handling at frequencies around 100 MHz. Consider the TO-247 package constraints for board space and thermal interface. Evaluate the 13 dB gain specification against system noise figure and linearity requirements for the intended application bandwidth.

Part Context

This part belongs to Microchip's RF MOSFET transistor portfolio, specifically designed for high-voltage, high-power radio frequency applications. It serves as a discrete semiconductor solution for amplifying signals in industrial and communication sectors where silicon-based VDMOS technology offers reliability and performance balance.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.

ARF463AGARF463AG
$35.21
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