ARF463AP1G

Overview

The ARF463AP1G is a silicon N-channel RF power MOSFET transistor designed for very high frequency applications. It features a TO-247AD flange mount package with three pins. The device supports a drain-source breakdown voltage of 500 V and a continuous drain current of 9 A. Operating frequencies reach up to 100 MHz, delivering an output power of 100 W with a gain of 15 dB. The component operates within a temperature range of -55°C to +150°C and has a maximum power dissipation of 180 W.

Feature Summary

• N-channel silicon construction optimized for RF power amplification
• High breakdown voltage capability suitable for demanding circuit environments
• Flange mount packaging facilitating efficient thermal management

Applications

• RF power amplification circuits
• Very high frequency band signal processing
• Industrial radio frequency equipment

Procurement Notes

Verify the manufacturer designation carefully, as the provided documentation lists ADPOW while other sources indicate Microchip Technology. Confirm the specific suffix meaning and RoHS compliance status against the official datasheet before procurement. Ensure the TO-247AD package dimensions match your thermal design requirements.

Selection Notes

Select this component when a 500 V drain-source voltage and 9 A continuous current are required in a flange mount configuration. Consider the 180 W power dissipation limit and the operating temperature range up to 150°C for thermal planning. Verify compatibility with very high frequency bands requiring 100 MHz operation and 15 dB gain characteristics.

Part Context

This part belongs to the category of RF MOSFET transistors utilizing silicon technology. It is housed in a TO-247AD package, which is a standard through-hole form factor for power devices. The device is classified under discrete semiconductors and specifically within the field-effect transistor segment for power applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-referencing requires consulting official manufacturer substitution guides or equivalent electrical specification databases.