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The ARF463BG is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It features a drain-source breakdown voltage of 500 V and operates at frequencies up to 100 MHz. The device delivers 100 W of output power with a gain of 13 dB. It utilizes a TO-247 package for through-hole mounting. The continuous drain current is rated at 14 A, with a maximum power dissipation of 250 W. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix against official Microchip documentation to confirm pinout and electrical tolerances. Ensure the procurement channel provides valid traceability for this RF component. Cross-reference the datasheet revision date to guarantee compatibility with current design specifications. Confirm RoHS compliance status directly from the manufacturer's declaration.
Select this component when designing circuits requiring 500 V blocking capability at 100 MHz. Compare the 100 W output power rating against system load requirements. Evaluate the TO-247 package suitability for the intended thermal management strategy. Consider the 14 A continuous current limit for biasing conditions.
This part belongs to the Microchip RF MOSFET family designed for high-power radio frequency applications. It complements other devices in the series offering varying power and frequency characteristics. The TO-247 form factor allows for efficient heat sinking in industrial enclosures. It serves as a discrete solution for linear and switching RF modes.
Consult the official Microchip substitution guide for verified equivalents. Check for compatible pinouts and thermal resistance values before swapping. Verify that alternative parts meet the 500 V and 100 MHz specifications.