ARF463BP1G

Overview

The ARF463BP1G is an N-channel RF MOSFET (VDMOS) manufactured by Microchip Technology. It features a Drain-Source Breakdown Voltage of 500 V and a Continuous Drain Current of 9 A. The device operates at frequencies up to 100 MHz with a power output of 100 W. It utilizes Silicon technology and is housed in a TO-247 package for common source applications.

Feature Summary

• N-channel RF MOSFET configuration
• High voltage breakdown capability
• Silicon-based semiconductor technology

Applications

• RF power amplification
• Broadband transmitter stages
• Industrial RF heating systems

Procurement Notes

Verify the specific suffix 'BP1G' against official Microchip documentation to confirm pinout and thermal characteristics, as variations exist within the ARF463 family. Ensure the component matches the required TO-247 footprint and lead configuration for your PCB design. Cross-reference datasheet revisions to confirm compliance with current RoHS standards before finalizing procurement orders.

Selection Notes

Select this component when a 500 V drain-source voltage rating is required for high-power RF applications. The 9 A continuous drain current supports substantial load handling. Consider the TO-247 package for its thermal performance advantages in high-power density scenarios compared to smaller surface-mount alternatives.

Part Context

This part belongs to the ARF463 series of RF transistors from Microchip Technology. It shares the core electrical specifications of the series but may differ in packaging or tape-and-reel options indicated by the suffix. It is designed for robust performance in demanding radio frequency environments requiring high voltage tolerance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip's official cross-reference tools for potential alternatives.