ARF465AG

Overview

The ARF465AG is an N-channel silicon RF MOSFET transistor manufactured by Microchip Technology. It features a VDMOS structure housed in a TO-247 package for through-hole mounting. The device supports a drain-source breakdown voltage of 1200 V and operates at frequencies up to 60 MHz. Key electrical specifications include a continuous drain current of 6 A, a power output of 150 W, and a gain of 13 dB. The component is designed for high-voltage radio frequency applications.

Feature Summary

• High-voltage capability with a 1200 V drain-source breakdown rating
• Optimized for radio frequency performance up to 60 MHz
• Robust thermal management via the TO-247 through-hole package

Applications

• RF power amplifier circuits
• Industrial radio frequency heating systems
• Medical diathermy equipment

Procurement Notes

Verify the specific datasheet revision when ordering, as technical parameters may be updated. Confirm that the TO-247-3 pinout matches your PCB layout requirements. Ensure that your supply chain sources components directly from authorized distributors to guarantee authenticity and traceability. Check for any recent product change notices regarding material composition or manufacturing location changes.

Selection Notes

Select this component when a high drain-source voltage of 1200 V is required alongside moderate RF power output. Compare against lower-voltage alternatives like the ARF460AG if system constraints allow for reduced voltage ratings but higher current. Consider the 60 MHz operating limit when designing matching networks for specific frequency bands. Evaluate thermal resistance requirements based on the intended power dissipation levels.

Part Context

This part belongs to the Microchip ARF series of radio frequency power MOSFETs. These devices are engineered for high-voltage, high-frequency applications using silicon VDMOS technology. The series offers various voltage and power combinations to suit different industrial and medical RF needs. The ARF465AG specifically targets applications requiring robust high-voltage switching capabilities at UHF frequencies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.