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The ARF465BG is an N-Channel Silicon RF Power MOSFET from Microchip Technology, designed for high-power radio frequency amplification. It features a drain-source voltage of 1200 V and delivers 150 W of output power at 60 MHz. The device operates with a continuous drain current of 6 A and provides 15 dB gain. Packaged in a TO-247-3 through-hole case, it supports a maximum power dissipation of 250 W and functions within a temperature range of -55°C to +150°C.
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the TO-247-3 mounting requirements align with your PCB layout and thermal design specifications. Ensure compliance with RoHS standards as indicated in the product attributes. Cross-reference pinout configurations to prevent installation errors during assembly.
Select this component when designing circuits requiring high voltage isolation and significant RF power output at 60 MHz. The 1200 V rating suits applications demanding robust voltage handling. Consider the 6 A current limit and 250 W dissipation capacity for thermal planning. This part is suitable for common source configurations where high gain and efficiency are critical for performance.
This RF MOSFET belongs to Microchip's VDMOS family, engineered for demanding radio frequency environments. It utilizes silicon technology to ensure reliability under high-stress conditions. The device complements other high-voltage RF solutions by providing substantial power density in a standard through-hole package, facilitating integration into existing industrial and medical hardware designs.
Consult official substitution lists for compatible parts. Verify that alternative components match the 1200 V rating, 150 W power output, and TO-247-3 package dimensions to maintain circuit integrity and thermal performance.