ARF466BG

Overview

The ARF466BG is a Radio Frequency Metal Oxide Semiconductor Field Effect Transistor manufactured by Microchip Technology. It utilizes Vertical DMOS technology and is housed in a TO-264 package. The device features a drain-source breakdown voltage of 1000 V and supports a continuous drain current of 13 A. It operates within a frequency range extending up to 45 MHz with a power dissipation rating of 357 W.

Feature Summary

• Vertical DMOS construction for high-frequency RF performance
• High voltage capability suitable for demanding RF applications
• Robust thermal management through TO-264 packaging

Applications

• RF power amplification
• Industrial heating systems
• Plasma generation equipment

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Microchip Technology or authorized distributors. Confirm that the TO-264 package dimensions and pinout match your PCB layout requirements before finalizing procurement decisions.

Selection Notes

Select this component when designing circuits requiring high-voltage RF switching or amplification at frequencies up to 45 MHz. Ensure the thermal design accommodates the specified power dissipation and that the gate drive characteristics align with the forward transconductance specifications.

Part Context

This part belongs to the ARF series of RF MOSFETs from Microchip Technology, designed for robust performance in radio frequency environments. It complements other devices like the ARF466AG and ARF466FL within the manufacturer's portfolio of vertical DMOS transistors.

Replacement Considerations

The ARF466AG is documented as a related variant within the same product family. Verify electrical compatibility and package equivalence before substituting.