ARF468BG

Overview

The ARF468BG is an N-channel RF MOSFET (VDMOS) manufactured by Microchip Technology, designed for high-power radio frequency amplification. It operates at a center frequency of 40.68 MHz with a gain of 15 dB and delivers 300 W of output power. The device features a drain-source breakdown voltage of 150 V and is housed in a TO-264 package.

Feature Summary

• High-power RF amplification capability
• VDMOS technology construction
• N-channel transistor configuration

Applications

• Radio frequency power amplification
• RF transmitter stages
• Broadcast equipment

Procurement Notes

Verify the specific part number suffix against official Microchip documentation to confirm exact electrical characteristics, as variations may exist within the product family. Ensure the procurement channel provides valid traceability and authenticity guarantees for semiconductor components.

Selection Notes

Select this component when designing circuits requiring 300 W output power at approximately 40 MHz. Consider the 150 V drain-source voltage rating and thermal management requirements associated with the TO-264 package for adequate heat dissipation during operation.

Part Context

This device belongs to the Microchip RF MOSFET portfolio, utilizing Vertical DMOS (VDMOS) technology. It is engineered specifically for demanding RF applications where high linearity and power efficiency are critical performance factors for signal integrity.

Replacement Considerations

Consult official Microchip substitution guides for verified alternatives. Cross-reference pinout compatibility and electrical parameters before integrating any substitute components into existing designs.