ARF469AG

Overview

The ARF469AG is an N-channel RF MOSFET manufactured by Microchip Technology, designed for high-power radio frequency applications. It operates with a drain-source voltage rating of 500 V and delivers an output power of 350 W at a frequency of 45 MHz. The device provides a gain of 16 dB and features a TO-264AA package. Key electrical parameters include a rated current of 30 A and a test current of 250 µA.

Feature Summary

• N-channel silicon construction optimized for RF power amplification
• High breakdown voltage capability suitable for demanding RF environments
• Designed for efficient signal gain in high-frequency operations

Applications

• RF power amplifier stages
• Broadcast transmitter systems
• Industrial RF heating equipment

Procurement Notes

Verify the specific suffix 'AG' against the official Microchip datasheet to confirm pinout and thermal characteristics match your design requirements. Ensure the TO-264AA footprint aligns with your PCB layout. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement.

Selection Notes

Select this component when designing circuits requiring 350 W output power at 45 MHz. The 500 V rating supports high-voltage RF applications. Consider the TO-264AA package for adequate heat dissipation. Compare gain and efficiency metrics against alternative devices if system constraints differ from standard 45 MHz operation.

Part Context

This part belongs to the ARF469 series of RF MOSFETs from Microchip Technology. The series includes variants like ARF469BG, which shares similar core specifications but may differ in packaging or minor electrical tolerances. These devices are engineered for robust performance in continuous wave RF applications.

Replacement Considerations

Publicly confirmed substitute part numbers for ARF469AG are not available in the provided reference data. Consult Microchip's official cross-reference tools or contact technical support for verified alternatives.