ARF473

Overview

The ARF473 is a matched pair of N-channel enhancement mode RF power MOSFETs designed for high-voltage push-pull or parallel operation in narrowband ISM and MRI power amplifiers up to 150 MHz. It features a common source configuration with a total device dissipation of 500 Watts at 25°C case temperature. The device provides a drain-source breakdown voltage of 500 Volts and continuous drain current of 10 Amps per device. In Class AB operation at 130 MHz, it delivers 300 Watts output power with 13 dB gain and 50% efficiency.

Feature Summary

• Matched pair configuration optimized for high-voltage push-pull or parallel RF amplifier circuits
• High electrical ruggedness capable of sustaining VSWR conditions up to 5:1 without degradation
• Low thermal resistance junction-to-case design for efficient heat transfer
• Large safe operating area (SOA) supporting superior performance under high voltage stress

Applications

• Narrowband ISM power amplifiers
• MRI power amplifiers
• Push-pull RF amplifier stages
• Parallel RF power configurations

Procurement Notes

Verify the specific revision status against the datasheet document identifier 050-4920 Rev C dated June 2003. Confirm that the package contains beryllium oxide ceramic; strict handling protocols are required to prevent inhalation of toxic dust during mounting or mechanical processing. Ensure electrostatic discharge precautions are implemented during storage and installation.

Selection Notes

Select this component for applications requiring matched dual transistors in high-voltage RF environments up to 150 MHz. The device is suitable for designs needing 300 Watts output capability with low thermal impedance. Consider the physical dimensions and flange mounting requirements when designing the heatsink interface. Verify compatibility with the specified gate drive voltages and biasing networks for the intended frequency band.

Part Context

This part belongs to the family of RF power MOSFETs manufactured by Advanced Power Technology (APT), now part of Microsemi Corporation. These devices are engineered specifically for radio frequency power amplification tasks where high voltage tolerance and thermal management are critical. The ARF473 utilizes a specialized package to facilitate push-pull topology implementation.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum Voltage Standing Wave Ratio (VSWR) the ARF473 can withstand?

The device exhibits electrical ruggedness capable of sustaining a VSWR of 5:1 for one pulse test without degradation in output power.

What hazardous material is present in the ARF473 package?

The ceramic portion of the device between the leads and the mounting flange contains beryllium oxide, which is highly toxic if inhaled as dust.

What is the typical forward transconductance of the ARF473?

The typical forward transconductance is 46 mhos, measured at VDS = 25V and ID = 5A.