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The ART2K0PEZ is a 2000 W LDMOS RF power transistor based on Advanced Rugged Technology (ART). It operates from 1 MHz to 450 MHz with a drain-source breakdown voltage of 200 V and qualified operation up to 65 V. The device features dual N-channel configuration in an OMP-1230-4F-1 surface mount package. Key electrical parameters include a typical power gain of 27.7 dB, drain efficiency of 71.7%, and gate-source threshold voltage of 2.6 V. It supports Class E operation up to 53 V and includes integrated dual-sided ESD protection.
Verify the specific ordering suffix Z against the manufacturer's current product data sheet to confirm packaging details. The ART2K0PEZ corresponds to the OMP-1230-4F-1 package delivered in trays. Ensure compliance with ESD handling standards during storage and assembly, as the device is sensitive to electrostatic discharge according to ANSI/ESDA/JEDEC classifications.
Select this component for high-power broadband applications requiring robust performance across ISM, broadcast, and communication bands. The device supports characterization from 30 V to 65 V, offering flexibility for various circuit designs. Consider the thermal resistance and junction temperature limits when designing heat dissipation solutions for continuous or pulsed operation modes.
The ART2K0PEZ belongs to Ampleon's ART family of LDMOS transistors, designed for high-efficiency and ruggedness. It shares the core die technology with the ART2K0PEG variant but differs in package type. This series targets demanding RF power amplifier applications where reliability and wideband capability are critical for industrial and broadcast transmitter architectures.
The ART2K0PEGZ serves as a functional equivalent using the OMP-1230-4G-1 package. Verify pinout compatibility and mechanical dimensions before substitution, as the package outline differs between the 4F and 4G variants despite identical electrical characteristics.