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The AT-31011-TR1G is an NPN silicon RF bipolar transistor designed for low-current applications. It operates at frequencies up to 30 GHz with a gain bandwidth product of 10 GHz. The device features a minimum DC collector-to-base current gain (hFE) of 70. Maximum ratings include a collector-emitter voltage (VCEO) of 5.5 V, an emitter-base voltage (VEBO) of 1.5 V, and a continuous collector current of 16 mA. It offers a typical small-signal gain of 13 dB and supports lead-free construction.
This component is officially classified as obsolete by Broadcom Limited and is no longer manufactured. Availability is restricted to existing stock or third-party distributors. Verify the specific revision status and authenticity through authorized channels before procurement, as supply chain continuity cannot be guaranteed from the manufacturer.
Select this part for high-frequency NPN switching or amplification tasks requiring low current handling. Ensure the application voltage does not exceed the 5.5 V collector-emitter rating. Consider the 16 mA current limit when designing bias networks. Evaluate thermal management requirements given the SOT-143 package constraints for continuous operation.
The AT-31011-TR1G belongs to the AT series of RF bipolar transistors from Broadcom Limited. It is functionally similar to the AT-31033-TR1G but may differ in specific electrical characteristics. Both parts are discontinued products within the company's discrete semiconductor portfolio, reflecting a shift toward newer integrated solutions.
The BFR106E6327HTSA1 is listed as a similar substitute part number. Verify pin compatibility and electrical specifications against original datasheets before substitution.