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The AT-31011-TR2G is an NPN silicon RF bipolar transistor from Broadcom Limited, designed for low-current applications. It operates at a maximum frequency of 30 GHz with a gain bandwidth product of 10 GHz and provides 13 dB gain. Key electrical limits include a collector-emitter voltage (Vceo) of 5.5 V, emitter-base voltage (Vebo) of 1.5 V, and continuous collector current of 16 mA. The device features a minimum DC current gain (hFE) of 70 and dissipates up to 150 mW. It functions within a temperature range of -65°C to 125°C and is supplied in a surface-mount SOT-143 package.
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential supply chain variations. Confirm RoHS compliance status and lead-free specifications against the latest official datasheet documentation before integration. Ensure storage conditions meet semiconductor handling standards to preserve device integrity during procurement and inventory management phases.
Select this component for designs requiring NPN silicon transistors with specific 5.5 V breakdown voltage and 16 mA current limits. Evaluate thermal dissipation requirements against the 150 mW rating and ensure the SOT-143 footprint aligns with PCB layout constraints. Consider the 30 GHz frequency limit for signal integrity in high-speed RF environments.
This part belongs to Broadcom's portfolio of silicon bipolar junction transistors engineered for radio frequency applications. The AT-31011 series represents a specialized line focusing on low-current performance metrics. The TR2G suffix indicates tape-and-reel packaging configuration for surface-mount technology integration.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official replacement guides for equivalent RF NPN transistors with matching SOT-143 packages and similar electrical characteristics.