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The AT-31033-TR2G is a silicon NPN bipolar RF transistor manufactured by Broadcom Limited. It operates at frequencies up to 30 GHz with a minimum DC collector-base gain (hfe) of 70. The device supports a maximum collector-emitter voltage (VCEO) of 5.5 V and an emitter-base voltage (VEBO) of 1.5 V, while handling a continuous collector current of 16 mA. Power dissipation is rated at 150 mW. It functions within a temperature range of -65°C to +150°C and is housed in an SOT-23 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Request original datasheets and test reports to confirm electrical parameters match specifications. Inspect packaging integrity upon receipt to ensure component reliability. Cross-reference part numbers carefully as obsolete items may have varying revision histories affecting compatibility.
Evaluate the 30 GHz frequency limit against system requirements to ensure adequate performance margins. Confirm that the 16 mA current rating meets load demands without exceeding power dissipation limits. Check voltage ratings (5.5 V VCEO, 1.5 V VEBO) against circuit operating conditions. Consider the SOT-23 package size for PCB layout constraints and thermal management needs.
This component belongs to Broadcom's portfolio of radio frequency discrete semiconductors. As an NPN silicon bipolar transistor, it serves niche high-frequency roles within broader RF infrastructure solutions. The product line focuses on specialized components for telecommunications and signal processing, distinct from Broadcom's integrated network processors.
Consult official Broadcom documentation for qualified substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure replacement components meet the same frequency and voltage specifications.