AT-32011-TR1G

Overview

The AT-32011-TR1G is a high-performance NPN silicon bipolar transistor designed for low current and low voltage operation. It utilizes the SOT-143 surface-mount package and features a 3.2-micron emitter-to-emitter pitch with a 20-finger interdigitated geometry to minimize parasitics. The device is optimized for maximum transition frequency at low voltages, making it suitable for battery-powered wireless applications. Key electrical specifications include a collector-emitter voltage of 5.5 V, a collector-base voltage of 11 V, and an emitter-base voltage of 1.5 V. The maximum continuous collector current is 32 mA, with a power dissipation rating of 200 mW. At 0.9 GHz with a 2.7 V supply and 2 mA bias, it achieves a minimum noise figure of 1.0 dB and associated gain of 12.5 dB.

Feature Summary

• Optimized for high performance in low current and low voltage environments
• Utilizes self-aligned-transistor process technology for enhanced speed and uniformity
• Features nitride passivation for robust surface protection

Applications

• Low Noise Amplifiers (LNA) in wireless systems
• Gain stages and buffers for RF circuits
• Oscillators and active mixers in battery-operated devices

Procurement Notes

Verify component authenticity by checking markings against official datasheet diagrams. Confirm RoHS compliance status through manufacturer documentation. Ensure storage conditions remain within specified limits to maintain device integrity prior to assembly.

Selection Notes

Select this component for designs requiring minimal noise figures at low bias currents. The SOT-143 package offers higher thermal performance compared to the SOT-23 variant. Verify that the operating voltage does not exceed the absolute maximum ratings to prevent permanent damage.

Part Context

This part belongs to the Avago AT-320xx series of RF bipolar transistors. It shares the same die as the AT-32033 but is housed in the SOT-143 package instead of the SOT-23. Both variants are fabricated using the same 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor process technology.

Replacement Considerations

The AT-32033 serves as a functional equivalent utilizing identical semiconductor die. Selection between these parts depends primarily on the required PCB footprint and thermal management capabilities of the specific application design.