AT-32033-BLKG

AT-32033-BLKG

  • Description:RF TRANS NPN 5.5V SOT-23
  • Series:-

SKU:a54942fa1017 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 5.5V SOT-23
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5.5V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):1dB ~ 1.3dB @ 900MHz
  • Gain:11dB ~ 12.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max):32mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

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AT-32033-BLKG

Overview

The AT-32033-BLKG is a low current, high performance NPN silicon bipolar transistor from Broadcom Limited. It utilizes the SOT-23 surface mount package and is optimized for maximum ft at low voltage operation. The device features a 3.2 micron emitter-to-emitter pitch and 20 emitter finger interdigitated geometry. Key electrical specifications include a collector-base voltage of 11 V, collector-emitter voltage of 5.5 V, and collector current of 32 mA. At 900 MHz with VCE = 2.7 V and IC = 2 mA, it achieves a typical noise figure of 1.3 dB and associated gain of 12.5 dB.

Feature Summary

  • Optimized for low current and low voltage wireless applications
  • High performance design utilizing self-aligned-transistor process
  • Suitable for battery-operated systems characterized at end-of-life voltage

Applications

  • Low Noise Amplifiers (LNA)
  • Gain stages in RF circuits
  • Oscillators and active mixers
  • Buffer amplifiers

Procurement Notes

Verify the component against official datasheets to confirm pinout orientation and marking codes. Ensure the ordering suffix matches the required packaging format. Confirm RoHS compliance status and lead-free material specifications prior to integration into production designs.

Selection Notes

Select this component for designs requiring high gain and low noise at 900 MHz under low bias conditions. Evaluate thermal resistance limits and power dissipation capabilities relative to the specific operating temperature range. Compare performance metrics against alternative transistors if higher breakdown voltages or different package footprints are required.

Part Context

This part belongs to the AT-3 series of NPN silicon bipolar transistors manufactured by Avago Technologies (now Broadcom). The series includes the AT-32011, which shares the same die but uses an SOT-143 package. These devices are fabricated using a 10 GHz ft, 30 GHz fmax Self-Aligned-Transistor process designed for high performance in mobile and wireless markets.

Replacement Considerations

The AT-32011 is a functional equivalent within the same family, differing primarily in its SOT-143 package compared to the SOT-23 used by the AT-32033. Verify pin compatibility and thermal characteristics when substituting between these two variants.

AT-32033-BLKGAT-32033-BLKG

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