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The AT-32033-TR1G is a low current, high performance NPN silicon bipolar transistor from Broadcom Limited. It is optimized for maximum ft at low voltage operation, making it suitable for battery-powered wireless applications. The device utilizes a 3.2 micron emitter-to-emitter pitch and reduced parasitic design to achieve extremely fast switching with moderate power and low noise resistance. Fabricated using Avago’s 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor (SAT) process, the die are nitride passivated for surface protection. Key electrical specifications include a collector-emitter voltage of 5.5 V, an emitter-base voltage of 1.5 V, and a continuous collector current of 32 mA. At 900 MHz, it delivers a minimum noise figure of 1 dB and associated gain of 12.5 dB.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices or obsolescence warnings before procurement. Ensure the ordering suffix matches the required tape-and-reel packaging configuration.
Select this component for designs requiring high-frequency performance at low bias currents. Compare against the AT-32011 if a four-lead SOT-143 package is preferred over the three-lead SOT-23 form factor. Evaluate thermal dissipation requirements as the device operates within specific junction temperature limits.
This part belongs to the AT-3 series of NPN silicon bipolar transistors manufactured by Broadcom Limited. The series includes variants like the AT-32011, which shares the same die but uses a different package. These devices are designed for general-purpose RF applications in cellular and PCS handsets.
AT-32011-BLKG
The device is fabricated using a process capable of 30 GHz fMAX.
It uses the industry-standard 3-lead SOT-23 plastic package.
Yes, the datasheet specifies that the component is lead-free.