AT-32033-TR1G

AT-32033-TR1G

$0.45
  • Description:RF TRANS NPN 5.5V SOT-23
  • Series:-

SKU:a522200b15ca Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5.5V SOT-23
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5.5V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):1dB ~ 1.3dB @ 900MHz
  • Gain:11dB ~ 12.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 2mA, 2.7V
  • Current - Collector (Ic) (Max):32mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23
  • Grade:-
  • Qualification:-

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AT-32033-TR1G

Overview

The AT-32033-TR1G is a low current, high performance NPN silicon bipolar transistor from Broadcom Limited. It is optimized for maximum ft at low voltage operation, making it suitable for battery-powered wireless applications. The device utilizes a 3.2 micron emitter-to-emitter pitch and reduced parasitic design to achieve extremely fast switching with moderate power and low noise resistance. Fabricated using Avago’s 10 GHz ft, 30 GHz fMAX Self-Aligned-Transistor (SAT) process, the die are nitride passivated for surface protection. Key electrical specifications include a collector-emitter voltage of 5.5 V, an emitter-base voltage of 1.5 V, and a continuous collector current of 32 mA. At 900 MHz, it delivers a minimum noise figure of 1 dB and associated gain of 12.5 dB.

Feature Summary

  • Optimized for low current and low voltage operation in wireless markets
  • High-performance RF characteristics with low noise figure and high gain
  • Nitride passivated die utilizing self-aligned-transistor fabrication process

Applications

  • Low Noise Amplifier (LNA)
  • Gain stage
  • Buffer
  • Oscillator
  • Active mixer

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices or obsolescence warnings before procurement. Ensure the ordering suffix matches the required tape-and-reel packaging configuration.

Selection Notes

Select this component for designs requiring high-frequency performance at low bias currents. Compare against the AT-32011 if a four-lead SOT-143 package is preferred over the three-lead SOT-23 form factor. Evaluate thermal dissipation requirements as the device operates within specific junction temperature limits.

Part Context

This part belongs to the AT-3 series of NPN silicon bipolar transistors manufactured by Broadcom Limited. The series includes variants like the AT-32011, which shares the same die but uses a different package. These devices are designed for general-purpose RF applications in cellular and PCS handsets.

Replacement Considerations

AT-32011-BLKG

FAQ

What is the maximum operating frequency for the AT-32033?

The device is fabricated using a process capable of 30 GHz fMAX.

What package type does the AT-32033 use?

It uses the industry-standard 3-lead SOT-23 plastic package.

Is the AT-32033 lead-free?

Yes, the datasheet specifies that the component is lead-free.

AT-32033-TR1GAT-32033-TR1G
$0.45
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