AT-32033-TR2G

Overview

The AT-32033-TR2G is a low current, high performance NPN silicon bipolar transistor from the Avago AT-3 series. It utilizes a 3.2 micron emitter-to-emitter pitch and 20-finger interdigitated geometry for optimized ft at low voltage. The device operates in the SOT-23 package with a maximum collector current of 32 mA, VCEO of 5.5 V, VEBO of 1.5 V, and power dissipation of 200 mW. It features a minimum hFE of 70 at 2.7 V and 2 mA bias. Thermal resistance (θjc) is 550 °C/W, with an operating temperature range of -65°C to +150°C.

Feature Summary

• Optimized for maximum ft at low voltage operation suitable for battery-powered wireless markets
• Utilizes self-aligned-transistor process with gold metalization for excellent uniformity and reliability
• Nitride passivated die provides surface protection

Applications

• Low noise amplifier (LNA)
• Gain stage
• Buffer
• Oscillator
• Active mixer

Procurement Notes

Verify the specific ordering suffix TR2G corresponds to the 10000-unit 13-inch reel configuration as documented in the official datasheet. Confirm RoHS compliance status through manufacturer documentation prior to procurement. Ensure component authenticity by sourcing from authorized distributors only.

Selection Notes

Select this component for applications requiring high gain and low noise figures at low bias currents. The SOT-23 package is appropriate for standard surface mount assembly techniques. Consider the AT-32011 variant if a four-lead SOT-143 package is required for higher performance characteristics.

Part Context

This component belongs to the Avago AT-3 series of NPN silicon bipolar transistors. The series includes the AT-32011, which shares identical electrical specifications but utilizes a four-lead SOT-143 package instead of the three-lead SOT-23 used by the AT-32033.

Replacement Considerations

The AT-32011 serves as a functional equivalent within the same family, differing only in the SOT-143 package configuration.

FAQ

What is the typical noise figure at 900 MHz?

The typical noise figure is 1.3 dB at 0.9 GHz when biased at VCE = 2.7 V and IC = 2 mA.

What is the associated gain capability at 900 MHz?

The device provides a typical associated gain of 12.5 dB at 0.9 GHz under optimal tuning conditions with VCE = 2.7 V and IC = 2 mA.

How does the device perform at end-of-life battery voltages?

The transistor is characterized for end-of-life battery use at 2.7 V, maintaining high performance metrics such as low noise figure and significant gain at this voltage level.