AT-32063-TR1

Overview

The AT-32063 is a low current, high performance NPN silicon bipolar transistor containing two unconnected devices in an SOT-363 package. Fabricated using a self-aligned process with a 30 GHz fmax, it features a 3.2 micron emitter-to-emitter pitch for fast operation and low noise resistance. The device supports collector currents up to 32 mA and operates within a voltage range of 5.5 V VCEO. It is optimized for battery-powered systems at 2.7 V, offering a typical noise figure of 1.1 dB and associated gain of 14.5 dB at 900 MHz.

Feature Summary

• Contains two independent NPN transistors in a single surface mount package
• Optimized for low voltage operation down to 1 V bias conditions
• Features extremely fast switching with moderate power and low noise characteristics
• Utilizes gold metallization and ion-implantation for excellent device uniformity

Applications

• Low Noise Amplifiers (LNA) in 900 MHz, 1.8 GHz, and 2.4 GHz systems
• Gain stages and buffers for battery-operated wireless devices
• Oscillators and active mixers in pager applications
• RF signal processing in end-of-life battery powered equipment

Procurement Notes

Verify the specific ordering suffix when purchasing, as options include bulk packaging or tape-and-reel configurations. Confirm RoHS compliance status through official documentation prior to integration. Ensure the component matches the required SOT-363 footprint dimensions during procurement planning.

Selection Notes

Select this component for designs requiring dual unconnected NPN transistors in a compact form factor. Evaluate biasing requirements against the specified 2.7 V optimization for optimal noise and gain performance. Consider the thermal resistance limits when designing heat dissipation strategies for continuous operation.

Part Context

This part belongs to the AT-3 series of bipolar transistors manufactured by Broadcom Limited. The series utilizes a specialized Self-Aligned-Transistor process designed for high-frequency RF applications. These components are engineered to provide consistent performance across varying temperature ranges while maintaining low power consumption profiles.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Designers should evaluate alternative RF bipolar transistors based on matching pinout compatibility, electrical specifications, and package dimensions if sourcing becomes unavailable.

FAQ

Are the two transistors inside the AT-32063 connected internally?

No, the device contains two high-performance NPN bipolar transistors that are electrically unconnected, allowing for flexible circuit design.

What is the maximum operating frequency capability of the AT-32063?

The transistor is fabricated using a process characterized by a 30 GHz fmax, making it suitable for high-frequency RF applications.

Is the AT-32063 suitable for use in low-voltage battery-powered devices?

Yes, the device is specifically characterized and optimized for end-of-life battery use at 2.7 V, and maintains functionality at 1 V bias.