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The AT-41511-TR1 is a general-purpose NPN silicon bipolar transistor from the Agilent AT-415 series, housed in a 4-lead SOT-143 surface-mount package. It utilizes a 10 GHz self-aligned-transistor process with nitride passivation and gold metalization. The device features a 4-micron emitter-to-emitter pitch and 14-finger interdigitated geometry for low noise and moderate power handling. At 900 MHz with VCE=5V and IC=5mA, it achieves a typical noise figure of 1.0 dB and associated gain of 15.5 dB. It is characterized for operation at 3V, 5V, and 8V bias supplies.
Verify the specific ordering suffix to confirm packaging format. The -TR1 suffix indicates a 7-inch reel containing 3000 devices. Confirm lead-free status if required by checking for the 'G' suffix in the part number. Ensure the component matches the original Agilent specification sheet provided.
Select this component when a general-purpose NPN transistor with low noise characteristics is required for RF applications around 900 MHz. The SOT-143 package offers lower parasitics compared to the 3-lead variant. Consider the bias voltage requirements, as the device is optimized for 5V to 8V supplies but performs well at 2.7V.
This component belongs to the Agilent AT-41511/AT-41533 family of general-purpose, low-noise NPN silicon bipolar transistors. The AT-41511 specifically uses the 4-lead SOT-143 package, while its counterpart, the AT-41533, uses the 3-lead SOT-23 package. Both share the same die and fabrication process.
The AT-41533 is the pin-compatible alternative within the same family, differing only in the SOT-23 package. No other direct substitutes are documented in the official datasheet.
The absolute maximum rating for collector current (IC) is 50 mA.
The primary difference is the package; the AT-41511 uses a 4-lead SOT-143 package, while the AT-41533 uses a 3-lead SOT-23 package. They share the same die.
At 2.4 GHz with VCE = 5 V and IC = 5 mA, the typical noise figure is 1.7 dB.