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The AT-41511-TR1G is a general-purpose NPN silicon bipolar transistor manufactured by Broadcom Limited. It utilizes the 10 GHz fT Self-Aligned-Transistor (SAT) process and features a 4-lead SOT-143 package with nitride passivation for surface protection. The device is optimized for bias supplies between 5V and 8V, though it performs well at 2.7V. Key electrical specifications include a maximum collector-emitter voltage of 12V, a maximum collector current of 50mA, and power dissipation of 225mW. At 900 MHz with VCE=5V and IC=5mA, it achieves a typical noise figure of 1.0 dB and an associated gain of 15.5 dB.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for Product Change Notices (PCN) regarding manufacturing updates. Ensure storage conditions adhere to specified temperature limits to maintain device integrity prior to assembly.
Select this component when designing circuits requiring low noise figures around 900 MHz with moderate power handling. The SOT-143 package is preferred over SOT-23 variants like the AT-41533 when lower parasitic capacitance is critical for impedance matching. Ensure biasing networks support the recommended 5V to 8V range for optimal performance.
This part belongs to the AT-415xx series of general-purpose NPN bipolar transistors. It shares the same die as the AT-41533 but differs in packaging. The AT-41533 uses a 3-lead SOT-23 package, whereas the AT-41511 employs the 4-lead SOT-143 package to minimize parasitics. Both are designed for economical high-frequency performance.
The AT-41533-TR1G is a confirmed substitute within the same family, sharing identical die characteristics but utilizing a 3-lead SOT-23 package instead of the 4-lead SOT-143. Designers must account for potential differences in parasitic capacitance and pinout configuration when substituting.