SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The AT-41532-TR1G is an RF bipolar transistor manufactured by Broadcom Limited, utilizing silicon technology. It features an NPN configuration designed for high-frequency applications with a maximum operating frequency of 8 GHz. Key electrical parameters include a DC collector current gain (hFE) minimum of 30, a collector-emitter voltage (VCEO) rating of 12 V, and an emitter-base voltage (VEBO) of 1.5 V. The device supports a continuous collector current of 60 mA and has a power dissipation capacity of 500 mW. It is housed in surface-mount packaging suitable for automated assembly processes.
Verify component authenticity through authorized Broadcom distributors or certified partners. Confirm RoHS compliance status via official documentation before procurement. Check current availability as the product may have limited supply or end-of-life status. Ensure proper handling procedures are followed during storage and installation to maintain device integrity.
Select this component for applications requiring 8 GHz performance with 12 V collector-emitter voltage tolerance. Verify that the 60 mA continuous current rating meets circuit requirements. Consider the 500 mW power dissipation limit when designing thermal management solutions. Ensure compatibility with surface-mount assembly processes given the specified package type.
This part belongs to Broadcom's portfolio of radio frequency semiconductor devices. It represents the company's silicon-based bipolar transistor offerings for high-frequency electronic applications. The component is part of Broadcom's broader infrastructure technology solutions targeting communication systems.
Consult official Broadcom documentation for verified substitute part numbers. Cross-reference specifications including frequency range, voltage ratings, and current capabilities when evaluating alternatives. Ensure any replacement maintains compatible pin configurations and thermal characteristics.