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Product Detailed Parameters
- Description：RF TRANS NPN 12V SOT-23
- Series：-
- Mfr：Broadcom Limited
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
- Gain：9dB ~ 14.5dB
- Power - Max：225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 5mA, 5V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The AT-41533-TR1G is a general-purpose NPN silicon bipolar transistor from Broadcom Limited, utilizing the Avago 10 GHz Self-Aligned-Transistor process. It features a 3-lead SOT-23 package and is optimized for low noise figure and high gain at 900 MHz. Key electrical parameters include a collector-emitter voltage of 12 V, collector current of 50 mA, and power dissipation of 225 mW. At 900 MHz with VCE=5V and IC=5mA, it achieves a typical noise figure of 1.0 dB and associated gain of 14.5 dB.
Feature Summary
- Utilizes a 10 GHz Self-Aligned-Transistor (SAT) fabrication process with nitride passivation for surface protection.
- Features a 14 emitter finger interdigitated geometry providing easy impedance matching and moderate power handling.
- Optimized for performance across 3, 5, and 8 volt bias supplies while maintaining good operation at 2.7 V.
- Designed for wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer.
Applications
- Low Noise Amplifier (LNA) in wireless systems
- RF gain stages
- Buffer amplifiers
- Oscillators
- Active mixers
Procurement Notes
Verify the component authenticity by checking the manufacturer marking against the datasheet pinout diagram. Confirm the ordering suffix matches the required reel quantity, such as TR1G for 3000 devices on a 7-inch reel. Ensure the device meets RoHS compliance requirements if applicable to your assembly process.
Selection Notes
Select this component when a low parasitic NPN transistor is needed for frequencies around 900 MHz. The SOT-23 package suits space-constrained designs. Compare the 14.5 dB associated gain against the AT-41511's 15.5 dB if lower parasitics are not critical, noting the AT-41511 uses a 4-lead SOT-143 package.
Part Context
This part belongs to the AT-415xx series of general-purpose NPN bipolar transistors. It shares the same die as the AT-41511 but utilizes a 3-lead SOT-23 package instead of the 4-lead SOT-143. Both variants offer excellent high-frequency performance suitable for RF applications.
Replacement Considerations
The AT-41511 is a direct functional substitute using the same die but in a 4-lead SOT-143 package. Verify that the circuit layout accommodates the different pinout and physical dimensions of the replacement package.
FAQ
What is the typical noise figure at 900 MHz?
The typical noise figure is 1.0 dB at 900 MHz with a collector-emitter voltage of 5 V and a collector current of 5 mA.
What is the maximum collector-emitter voltage?
The absolute maximum rating for collector-emitter voltage (VCEO) is 12 V.
Is the device lead-free?
Yes, the AT-41533 is specified as lead-free in the features list.
