AT-41586-BLKG

Overview

The AT-41586-BLKG is a general-purpose NPN bipolar transistor fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. It features a low-cost surface mount .085" diameter plastic package with a 4 micron emitter-to-emitter pitch and 14 emitter finger interdigitated geometry. The device offers excellent high-frequency performance, including a typical noise figure of 1.4 dB at 1 GHz and 1.7 dB at 2 GHz. Associated gain reaches 17.0 dB at 1 GHz and 12.5 dB at 2 GHz. Key electrical specifications include a collector current of 60 mA maximum, power dissipation of 500 mW, and a transition frequency of 8.0 GHz.

Feature Summary

• Low Noise Figure: Achieves 1.4 dB typical at 1 GHz and 1.7 dB typical at 2 GHz for sensitive RF applications.
• High Associated Gain: Delivers 17.0 dB typical at 1 GHz and 12.5 dB typical at 2 GHz.
• Low Cost Surface Mount Package: Utilizes a compact .085" diameter plastic package for cost-effective integration.
• Tape and Reel Option Available: Supports automated assembly processes.

Applications

• Wireless systems as a Low Noise Amplifier (LNA)
• Gain stage in RF circuits
• Buffer amplifier applications
• Oscillator circuits
• Mixer stages

Procurement Notes

Verify the specific ordering suffix to confirm packaging format. The BLKG suffix indicates bulk packaging containing 100 devices per unit. Confirm RoHS compliance status through official documentation before procurement. Ensure availability aligns with project timelines as lead times may vary by distributor.

Selection Notes

Select this component for intermediate-sized transistor applications requiring easy impedance matching for low noise and moderate power. The 14 emitter finger interdigitated geometry facilitates design flexibility. Verify that the operating frequency range and bias conditions match the required noise figure and gain specifications for the target application.

Part Context

This part belongs to the AT-41586 series of general-purpose NPN bipolar transistors. The series includes variants such as AT-41586-TR1G and AT-41586-TR2G, which differ primarily in packaging type (tape and reel) rather than electrical characteristics. All variants share the same core semiconductor structure and performance metrics.

Replacement Considerations

Direct replacements must match the 10 GHz fT SAT process and similar pinout configuration. Evaluate alternative NPN RF transistors with comparable noise figures and gain characteristics at 1-2 GHz. Ensure thermal resistance and package dimensions are compatible with existing PCB layouts.