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Product Detailed Parameters
- Description：RF TRANS NPN 12V 9GHZ CHIP
- Series：-
- Mfr：Broadcom Limited
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：9GHz
- Noise Figure (dB Typ @ f)：1.9dB ~ 3dB @ 2GHz ~ 4GHz
- Gain：10.5dB ~ 14dB
- Power - Max：600mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 35mA, 8V
- Current - Collector (Ic) (Max)：80mA
- Operating Temperature：200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Chip
- Grade：-
- Qualification：-
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Overview
The AT-42000-GP4 is a general-purpose NPN silicon bipolar transistor chip designed for VHF, UHF, and microwave applications. Fabricated using a 10 GHz fT self-aligned-transistor process with nitride passivation, it features a 4-micron emitter-to-emitter pitch and a 20-finger interdigitated geometry. This structure provides impedances suitable for low noise and medium power functions. Key electrical specifications include a maximum collector current of 80 mA, a collector-emitter voltage of 12 V, and a power dissipation rating of 600 mW. The device offers a typical gain-bandwidth product of 9.0 GHz.
Feature Summary
- High output power capability at 1 dB compression
- Low noise figure optimized for amplifier use
- High gain-bandwidth product for wideband operation
Applications
- Low noise amplifiers
- Wideband amplifiers
- Mixers
- Oscillators
Procurement Notes
Verify the specific ordering suffix GP4 to confirm tray packaging quantities. Confirm RoHS compliance status through official documentation before procurement. Ensure static precautions are observed during handling due to ESD sensitivity. Check availability as this component may be subject to obsolescence notifications.
Selection Notes
Select this component for designs requiring high frequency performance up to 6 GHz. The 50 Ohm impedance matching facilitates integration into standard RF circuits. Consider the 600 mW power dissipation limit when designing thermal management solutions for the die attach application.
Part Context
This part belongs to the Avago Technologies (now Broadcom) portfolio of RF bipolar transistors. It utilizes a 10 GHz fT self-aligned-transistor fabrication process. The device serves as a replacement for older components like the 5965-8909E. It is intended for use in general-purpose RF applications across VHF, UHF, and microwave bands.
Replacement Considerations
The datasheet explicitly states that the AT-42000 obsoletes the 5965-8909E. Verify pinout and electrical compatibility if substituting other generic RF NPN chips.
