AT-42086-TR1G

Overview

The AT-42086 is a general-purpose NPN silicon bipolar transistor designed for high-frequency applications up to 6 GHz. Fabricated using a 10 GHz fT self-aligned-transistor process, it features a low-cost surface mount plastic package with a 4 micron emitter-to-emitter pitch and 20 interdigitated emitter fingers. Key electrical specifications include a typical power output of 20.5 dBm at 1 dB gain compression (2.0 GHz), a typical gain of 13.5 dB under the same conditions, and a minimum forward current transfer ratio (hFE) of 30. The device supports a maximum collector current of 80 mA and a power dissipation of 500 mW.

Feature Summary

• High output power and gain performance suitable for medium power RF applications
• Low noise figure characteristics optimized for low noise amplifier functions
• Self-aligned-transistor fabrication process ensuring excellent device uniformity and reliability

Applications

• Wireless system low noise amplifiers
• RF gain stages
• Buffer circuits
• Oscillators
• Mixers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific ordering suffixes such as TR1G for reel quantities. Ensure storage and handling procedures align with the specified junction temperature limits to maintain device integrity.

Selection Notes

Select this component when designing circuits requiring a balance of medium power output and low noise figures in the sub-6 GHz range. Evaluate impedance matching requirements based on the 50 Ohm optimum noise match near 1 GHz. Consider thermal management capabilities given the 500 mW power dissipation rating in the specified plastic package.

Part Context

This component belongs to Broadcom's portfolio of RF bipolar transistors, specifically utilizing their SAT process technology. It serves as a discrete solution for wireless infrastructure and consumer electronics where integrated MMICs may not be cost-effective or flexible enough for custom impedance matching.

Replacement Considerations

Consult official datasheets for cross-reference data. Verify pinout compatibility and absolute maximum ratings before substituting with other NPN RF transistors from different manufacturers.