ATF-331M4-BLK

ATF-331M4-BLK

  • Description:RF MOSFET PHEMT FET 4V MINIPAK
  • Series:-

SKU:9d1ab1c9d529 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 4V MINIPAK
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Technology:pHEMT FET
  • Frequency:2GHz
  • Gain:15dB
  • Voltage - Test:4 V
  • Current Rating (Amps):305mA
  • Noise Figure:0.6dB
  • Current - Test:60 mA
  • Power - Output:19dBm
  • Voltage - Rated:5.5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:0505 (1412 Metric)
  • Supplier Device Package:MiniPak 1412
  • Configuration:-

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ATF-331M4-BLK

Overview

The Broadcom ATF-331M4-BLK is a low noise pseudomorphic HEMT housed in a miniature leadless MiniPak package measuring 1.4 mm x 1.2 mm x 0.7 mm. It features a 1600 micron gate width and operates effectively across the 450 MHz to 10 GHz frequency range. At 2 GHz with VDS = 4V and IDS = 60 mA, it delivers a typical noise figure of 0.6 dB, associated gain of 15 dB, output power at 1 dB gain compression of 19 dBm, and an output third-order intercept point of 31 dBm. The device supports tape-and-reel packaging options.

Feature Summary

  • Ultra-low noise figure performance suitable for sensitive front-end applications
  • High linearity characteristics providing enhanced intercept points
  • Miniature leadless package design ideal for space-constrained devices

Applications

  • Tower mounted amplifiers for GSM/TDMA/CDMA base stations
  • Low noise amplifiers and driver amplifiers for wireless data infrastructures
  • First or second stage LNA for WLAN, WLL/RLL, and MMDS systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The BLK suffix indicates antistatic bag packaging containing 100 units per container. Confirm that the required quantity aligns with this bulk packaging format rather than standard reel quantities.

Selection Notes

Evaluate the trade-off between optimal noise matching and achievable production test matches when designing circuits. Consider the impact of source impedance on noise figure calculations using provided noise parameters. Ensure biasing conditions match the specified test points for accurate performance prediction.

Part Context

This component belongs to the PHEMT FET family from Avago Technologies (now Broadcom). It is designed as a high-linearity, low-noise solution for RF applications. Smaller geometry variants like the ATF-34143 may be considered for higher gain requirements in bands above 1.8 GHz.

Replacement Considerations

ATF-34143

FAQ

What is the physical size of the ATF-331M4 package?

The device is housed in a MiniPak leadless package with dimensions of 1.4 mm x 1.2 mm x 0.7 mm.

How does the source impedance affect the noise figure?

The noise figure increases if the source impedance deviates from the optimum reflection coefficient (Γo), based on the normalized noise resistance and circuit losses.

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) rating is 5.5 V.

ATF-331M4-BLKATF-331M4-BLK

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