ATF-331M4-TR2

ATF-331M4-TR2

  • Description:RF MOSFET PHEMT FET 4V MINIPAK
  • Series:-

SKU:6dade3f31d06 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 4V MINIPAK
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:2GHz
  • Gain:15dB
  • Voltage - Test:4 V
  • Current Rating (Amps):305mA
  • Noise Figure:0.6dB
  • Current - Test:60 mA
  • Power - Output:19dBm
  • Voltage - Rated:5.5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:0505 (1412 Metric)
  • Supplier Device Package:MiniPak 1412
  • Configuration:-

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ATF-331M4-TR2

Overview

The ATF-331M4 is a low noise pseudomorphic HEMT (pHEMT) housed in a miniature leadless MiniPak package measuring 1.4 mm x 1.2 mm x 0.7 mm. It features a 1600 micron gate width and operates within the 450 MHz to 10 GHz frequency range. At 2 GHz with Vds = 4V and Ids = 60 mA, it provides a typical noise figure of 0.6 dB, associated gain of 15 dB, P1dB of 19 dBm, and OIP3 of 31 dBm. The device supports a maximum drain-source voltage of 5.5 V and total power dissipation of 400 mW.

Feature Summary

  • Miniature leadless MiniPak package designed for space-constrained devices and hybrid modules
  • High linearity combined with ultra-low noise figure suitable for base station LNA applications
  • Excellent uniformity in product specifications across production wafers

Applications

  • Tower mounted amplifiers and driver amplifiers for GSM/TDMA/CDMA base stations
  • Low noise amplifiers for WLAN, WLL/RLL, MMDS, and wireless data infrastructures
  • General purpose discrete pHEMT for other ultra low noise applications

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via current datasheets. Check availability as distribution may vary by region. Ensure ordering suffixes match required packaging quantities such as reel sizes or antistatic bags.

Selection Notes

Consider the ATF-34143 for higher gain performance, particularly in bands at 1.8 GHz and above. Evaluate bias conditions carefully as quiescent drain current affects P1dB and PAE. Account for matching network losses when calculating final amplifier noise figure relative to Fmin. Verify thermal resistance requirements for high channel temperature operation.

Part Context

The ATF-331M4 belongs to the Avago/Broadcom pHEMT FET family. It shares design similarities with the ATF-33143 but utilizes a distinct MiniPak footprint instead of SOT-343. This smaller geometry enables integration into compact RF front-end modules where standard transistor packages are too large.

Replacement Considerations

ATF-33143-TR2G offers similar electrical performance but uses an SOT-343 package requiring PCB layout changes. ATF-34143 provides higher gain for frequencies above 1.8 GHz but requires different impedance matching networks.

ATF-331M4-TR2ATF-331M4-TR2

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