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The ATF-34143-TR2G is a GaAs pHEMT RF JFET transistor manufactured by Broadcom Limited. It operates at a frequency of 2 GHz with an N-Channel configuration in an SOT-343 package. Key electrical parameters include a gain of 17.5 dB, a noise figure of 0.5 dB, and a P1dB compression point of 20 dBm. The device supports a maximum drain-source voltage of 5.5 V and a gate-source voltage of -5 V. Continuous drain current is rated at 145 mA, with power dissipation up to 725 mW. Minimum forward transconductance is 230 mmho. Maximum operating temperature reaches +160 C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance details via official datasheets before integration. Ensure supply chain stability as availability may be restricted. Validate package markings against official specifications to prevent counterfeit substitution during procurement processes.
Select this component when specific 2 GHz operation with 17.5 dB gain is required. Compare noise figure and power dissipation limits against system thermal constraints. Verify SOT-343 footprint compatibility with existing PCB layouts. Consider the obsolete lifecycle status when planning long-term production runs.
This part belongs to the Broadcom RF JFET transistor family utilizing GaAs pHEMT technology. It shares the SOT-343 form factor with related models like ATF-35143 but differs in current handling and gain characteristics. The series targets low-noise applications where compact size and high linearity are critical design factors.
ATF-34143-BLKG serves as a tape-and-reel alternative within the same product family. ATF-34143-TR1G offers identical electrical specifications with different packaging quantities. Verify pinout and thermal characteristics match before substituting.