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The ATF-35143-TR1G is a GaAs pHEMT RF JFET transistor manufactured by Broadcom Limited. It operates at frequencies up to 2 GHz with an N-Channel configuration in an SOT-343 package. Key electrical parameters include a gain of 18 dB, a noise figure of 0.4 dB, and a P1dB compression point of 11 dBm. The device supports a maximum drain-source voltage of 5.5 V and a gate-source voltage of -5 V, with a continuous drain current of 80 mA. Power dissipation is rated at 300 mW, and the minimum forward transconductance is 120 mmho. The component is designed for surface mount installation and has a maximum operating temperature of +160 C.
This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or surplus channels. Designers should confirm RoHS compliance details directly from the datasheet before procurement. Due to the discontinued status, long-term supply continuity cannot be guaranteed through standard manufacturing channels.
Select this part when a low noise figure and moderate gain are required at frequencies around 2 GHz. The SOT-343 package suits applications with strict size limitations. Engineers must ensure the biasing circuit accommodates the specific voltage and current ratings provided in the specifications. Consider power dissipation limits during thermal analysis for reliable operation.
The ATF-35143 belongs to Broadcom's portfolio of gallium arsenide field-effect transistors. These components are engineered for radio frequency applications where signal integrity is critical. The product line typically includes variants optimized for different power and noise characteristics within similar packaging constraints.
Public confirmed substitute part numbers are not available in the provided documentation. As the component is obsolete, engineers should consult official replacement guides or contact the manufacturer for qualified alternatives.