ATF-35143-TR2G

Overview

The ATF-35143-TR2G is a GaAs pHEMT RF transistor manufactured by Broadcom Limited, designed for low-noise amplification in the 2 GHz frequency range. It features an N-channel configuration housed in an SOT-343 surface-mount package. Key electrical parameters include a gain of 18 dB and a noise figure of 0.4 dB at the operating frequency. The device supports a maximum drain-source voltage of 5.5 V and a gate-source voltage of -5 V, with a continuous drain current rating of 80 mA. Power dissipation is rated at 300 mW, and it operates within a temperature range up to +160°C.

Feature Summary

• Utilizes GaAs pHEMT technology for high-frequency performance
• Optimized for ultra-low noise figure applications
• Provides high gain suitable for signal amplification
• Designed for compact surface-mount integration

Applications

• Low noise amplifier stages in wireless communication systems
• RF front-end modules for mobile devices
• Satellite navigation receiver circuits
• Test and measurement equipment input stages

Procurement Notes

Verify component authenticity through authorized channels as this part may be discontinued or subject to supply constraints. Confirm RoHS compliance status and specific tape-and-reel packaging requirements before procurement. Ensure compatibility with existing PCB footprints and thermal management designs during acquisition planning.

Selection Notes

Select this component when minimal noise addition is critical for system sensitivity. Compare against alternatives based on required gain levels and available bias voltages. Consider the SOT-343 package size for space-constrained layouts. Validate that the 80 mA current limit meets the design's power budget and thermal dissipation capabilities.

Part Context

This device belongs to Broadcom's ATF series of RF transistors, which are widely recognized for their reliability in microwave and radio frequency applications. The ATF-35143 variant specifically targets low-noise performance, distinguishing it from higher-power variants in the same family. It represents a standard solution for 2 GHz band operations in legacy and specialized RF designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult official Broadcom replacement guides or evaluate equivalent GaAs pHEMT devices with matching pinouts and electrical specifications.