ATF-50189-TR1

Description：RF MOSFET E-PHEMT 4.5V SOT89
Series：-

SKU:3a0602f08769 Category: RF FETs, MOSFETs Brand: Broadcom Limited

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Product introduction

Product Detailed Parameters

Description：RF MOSFET E-PHEMT 4.5V SOT89
Series：-
Mfr：Broadcom Limited
Package：Tape & Reel (TR)
Technology：E-pHEMT
Frequency：2GHz
Gain：15.5dB
Voltage - Test：4.5 V
Current Rating (Amps)：1A
Noise Figure：1.1dB
Current - Test：280 mA
Power - Output：29dBm
Voltage - Rated：7 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Configuration：-

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ATF-50189-TR1

Overview

The Broadcom ATF-50189 is an enhancement mode pseudomorphic HEMT (E-pHEMT) FET designed for high linearity and medium power applications. Packaged in a surface mount SOT-89 format, it operates across a frequency range of 400 MHz to 3.9 GHz. Key electrical specifications at a typical bias of Vds = 4.5V and Ids = 280 mA include a noise figure of 1.1 dB, gain of 15.5 dB, output IP3 of 45 dBm, and P1dB of 29 dBm. The device achieves a Power Added Efficiency (PAE) of 62% at P1dB with a Linearity Figure of Merit (LFOM) of 14 dB.

Feature Summary

Combines low noise figure with high output IP3 at the same bias point
Utilizes enhancement mode technology requiring a single positive gate voltage
Provides excellent uniformity in product specifications

Applications

Front-end LNA Q2 and Q3 for Cellular/PCS and WCDMA wireless infrastructure
Driver or Pre-driver Amplifier for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-pHEMT for other high linearity applications

Procurement Notes

Verify component authenticity by checking package markings against official documentation. Ensure handling procedures follow electrostatic discharge precautions as specified in Avago Application Note A004R. Confirm that the ordering suffix matches the required tape-and-reel packaging option if applicable.

Selection Notes

Select this component when designs require simultaneous optimization of noise figure and linearity. It is suitable for receiver and transmitter stages where high output IP3 is critical. Consider the operating frequency range up to 3.9 GHz and the thermal resistance characteristics for heat dissipation requirements.

Part Context

This device belongs to the family of high linearity, medium power, low noise E-pHEMT FETs from Broadcom Limited. It is specifically engineered for wireless infrastructure applications demanding robust performance in both receiving and transmitting signal chains.