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The ATF-50189 is an enhancement mode pseudomorphic HEMT (E-pHEMT) in a surface-mount SOT-89 package. It operates from 400 MHz to 3.9 GHz with a typical gain of 15.5 dB and noise figure of 1.1 dB at 2 GHz. The device delivers 45 dBm output IP3 and 29 dBm P1dB under standard bias conditions (Vds = 4.5V, Ids = 280 mA). Power added efficiency reaches 62% at P1dB. Absolute maximum ratings include a drain-source voltage of 7V, gate-source voltage of -5V to 0.8V, and total power dissipation of 2.25W.
Verify component authenticity by checking the package marking "0G" against the datasheet identification. Confirm the manufacturing month code on the device surface matches the expected production date. Ensure the supplier provides documentation confirming lead-free status and MSL-2 classification prior to finalizing orders.
Select this component when simultaneous low noise and high linearity are required within a single bias point. The SOT-89 package offers a cost-effective surface-mount solution compared to larger RF packages. Consider the 400 MHz to 3.9 GHz operating range to ensure compatibility with target cellular and PCS frequency bands.
This part belongs to Broadcom's lineup of pseudomorphic HEMT devices designed for RF front-end applications. It serves as a medium-power amplifier suitable for both receiver and transmitter stages. The E-pHEMT technology eliminates the need for negative gate voltages typically associated with depletion mode devices.
No public confirmed substitute part numbers are available in the provided documentation.