ATF-501P8-BLK

Description：RF MOSFET E-PHEMT 4.5V 8LPCC
Series：-

SKU:6a5f10d102c2 Category: RF FETs, MOSFETs Brand: Broadcom Limited

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Product introduction

Product Detailed Parameters

Description：RF MOSFET E-PHEMT 4.5V 8LPCC
Series：-
Mfr：Broadcom Limited
Package：Bulk
Technology：E-pHEMT
Frequency：2GHz
Gain：15dB
Voltage - Test：4.5 V
Current Rating (Amps)：1A
Noise Figure：1dB
Current - Test：280 mA
Power - Output：29dBm
Voltage - Rated：7 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：8-WFDFN Exposed Pad
Supplier Device Package：8-LPCC (2x2)
Configuration：-

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ATF-501P8-BLK

Overview

The ATF-501P8-BLK is a GaAs EpHEMT RF transistor designed for high linearity applications. It operates at frequencies up to 2 GHz and provides a gain of 15 dB. The device features a Vds breakdown voltage of 7 V and supports a continuous drain current of 1 A. Key performance metrics include a noise figure of 1 dB, a P1dB compression point of 29 dBm, and a minimum forward transconductance of 1872 mmho. Power dissipation is rated at 3.5 W. It is housed in an LPCC-8 package suitable for surface mount installation.

Feature Summary

Utilizes GaAs technology for high linearity RF performance
EpHEMT configuration optimized for low noise operation
Supports high continuous drain current capabilities
Designed for surface mount integration in compact layouts

Applications

RF amplifier stages requiring high linearity
Low noise amplification in communication systems
High frequency signal processing circuits

Procurement Notes

Verify component authenticity through authorized channels as the part status is listed as obsolete. Confirm RoHS compliance details via official documentation before integration. Ensure storage conditions meet specified temperature ranges to maintain device integrity. Cross-reference datasheet revisions to ensure compatibility with existing design specifications. Validate supply chain sources to avoid counterfeit components.

Selection Notes

Select this component when high linearity and low noise are critical requirements for RF front-end designs. Consider the 15 dB gain and 29 dBm P1dB characteristics for signal integrity. Evaluate the 1 A drain current capability against power handling needs. Ensure the LPCC-8 package fits within the available PCB real estate constraints.

Part Context

This component belongs to the Broadcom Limited RF JFET transistor family. It is specifically engineered using GaAs EpHEMT technology. The series targets applications demanding high performance in radio frequency environments. The ATF-501P8-BLK variant offers specific electrical parameters tailored for linear amplification tasks.