ATF-501P8-TR1

Overview

The ATF-501P8-TR1 is an EpHEMT RF transistor manufactured by Broadcom Limited using GaAs technology. It operates at a frequency of 2 GHz with a gain of 15 dB and a noise figure of 1 dB. The device features a drain-source breakdown voltage of 7 V, continuous drain current of 1 A, and power dissipation of 3.5 W. It is housed in an 8-LPCC (2x2) SMD package and has a P1dB compression point of 29 dBm.

Feature Summary

• High linearity performance suitable for RF applications
• EpHEMT construction on GaAs substrate
• Low noise figure for signal integrity

Applications

• RF amplifier stages
• Wireless communication systems
• Test and measurement equipment

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as the product lifecycle status may indicate end-of-life conditions. Ensure storage and handling meet ESD protection standards for sensitive semiconductor devices.

Selection Notes

Select this component for designs requiring high linearity and low noise at 2 GHz. Consider the 8-LPCC package size for PCB layout constraints. Evaluate thermal management requirements given the 3.5 W power dissipation rating. Compare against alternative EpHEMT devices if different voltage or current ratings are needed.

Part Context

This part belongs to the ATF series of RF transistors from Broadcom Limited. It is a variant of the ATF-501P8 family, specifically packaged in tape and reel format for automated assembly. The series utilizes GaAs EpHEMT technology for high-frequency performance.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.