ATF-501P8-TR2

Overview

The ATF-501P8-TR2 is an EpHEMT RF transistor manufactured by Broadcom Limited using GaAs technology. It operates at a frequency of 2 GHz with a gain of 15 dB and a noise figure of 1 dB. The device features a drain-source breakdown voltage of 7 V and a continuous drain current of 1 A. Power dissipation is rated at 3.5 W, with a P1dB compression point of 29 dBm. It is housed in an 8-LPCC (2x2) SMD package and supports a temperature range from -65 C to +150 C.

Feature Summary

• High linearity performance suitable for medium-power amplification
• Low noise figure characteristics for signal integrity
• Single-voltage operation simplifying bias circuit design

Applications

• Medium-power amplifier stages
• RF front-end modules
• Wireless communication systems

Procurement Notes

This component has been officially declared obsolete by Broadcom Limited. Last time buys were announced in December 2017. Current availability is limited to existing stock or surplus channels. Verify authenticity carefully as the part is no longer in active production. Ensure any sourced units match the original specifications before integration into new designs.

Selection Notes

Engineers should prioritize replacement strategies due to the obsolescence status. Evaluate alternative components that offer compatible electrical parameters such as gain, noise figure, and power handling capabilities. Consider the transition costs and redesign efforts required when substituting this discontinued E-pHEMT device with newer generation RF transistors.

Part Context

The ATF-501P8 series represents a family of high-linearity, low-noise E-pHEMT devices designed for RF applications. The TR2 suffix indicates a specific tape-and-reel packaging configuration. These components are engineered for use in broadband applications ranging from 400 MHz to 3.9 GHz, providing robust performance in demanding wireless environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct replacements must be identified through independent technical comparison of key RF parameters.