ATF-52189-TR1

Overview

The ATF-52189 is a high linearity mode enhancement pseudomorphic HEMT (E-pHEMT) in an SOT-89 surface mount package. It operates from 50 MHz to 6 GHz with single positive Vgs bias, eliminating negative gate voltage requirements. Key electrical specifications at 4.5V/200mA include a typical output IP3 of 42 dBm, P1dB of 27 dBm, gain of 16.0 dB, and noise figure of 1.50 dB at 2 GHz. Power added efficiency reaches 55% at P1dB. The device features excellent specification uniformity and is designed for medium-power, high-linearity amplification.

Feature Summary

• Single voltage operation utilizing enhancement mode technology
• High linearity and P1dB performance characteristics
• Low noise figure suitable for sensitive front-end applications

Applications

• Front-end LNA Q2 and Q3 for Cellular/PCS and WCDMA wireless infrastructure
• Driver or Pre-driver Amplifier for WLAN, WLL/RLL and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging options such as tape-and-reel availability. Confirm RoHS compliance status and lead-free status through official datasheets before procurement. Ensure the component matches the required SOT-89 package outline MO229 for DRP-N compatibility during integration planning.

Selection Notes

Select this component for designs requiring medium power and high linearity within the 50 MHz to 6 GHz range. Consider the single positive Vgs requirement which simplifies bias circuitry compared to depletion mode devices. Evaluate thermal resistance and dissipation limits relative to the expected RF drive levels and ambient operating conditions to ensure reliable operation within absolute maximum ratings.

Part Context

This component is part of Broadcom Limited's portfolio of radio frequency and microwave semiconductor devices. It serves as a specialized active element for signal amplification in communication systems. The device represents an evolution in pseudomorphic HEMT technology focused on improving linearity metrics while maintaining low noise performance for modern wireless standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.