ATF-521P8-BLK

ATF-521P8-BLK

  • Description:RF MOSFET PHEMT FET 4.5V 8LPCC
  • Series:-

SKU:2fd5ec4f9f5d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 4.5V 8LPCC
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Bulk
  • Technology:pHEMT FET
  • Frequency:2GHz
  • Gain:17dB
  • Voltage - Test:4.5 V
  • Current Rating (Amps):500mA
  • Noise Figure:1.5dB
  • Current - Test:200 mA
  • Power - Output:26.5dBm
  • Voltage - Rated:7 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:8-WFDFN Exposed Pad
  • Supplier Device Package:8-LPCC (2x2)
  • Configuration:-

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ATF-521P8-BLK

Overview

The Broadcom ATF-521P8 is a single-voltage high linearity, low noise enhancement mode pseudomorphic HEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC) package. The device operates from 50 MHz to 6 GHz and is designed for medium-power applications. At 2 GHz with a 4.5V drain-source voltage and 200 mA drain current, it provides a typical gain of 17 dB, an output third-order intercept point (OIP3) of 42 dBm, and a 1 dB compression point (P1dB) of 26.5 dBm. The noise figure is typically 1.5 dB at 2 GHz.

Feature Summary

  • Enhancement mode technology eliminates the need for negative gate voltage biasing associated with conventional depletion mode devices.
  • High linearity performance characterized by a 12.5 dB Linearity Figure of Merit (LFOM).
  • Thermally efficient 2x2 mm LPCC package with backside metalization for excellent thermal dissipation.

Applications

  • Front-end LNA Q2 and Q3 stages for Cellular/PCS and WCDMA wireless infrastructure.
  • Driver or pre-driver amplifiers for WLAN, WLL/RLL, and MMDS applications.
  • Base station transmit drivers for W-CDMA, CDMA, or GSM standards.

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the received part matches the ATF-521P8 designation and packaging specifications. Ensure handling procedures adhere to electrostatic discharge precautions as specified in Avago Technologies Application Note A004R.

Selection Notes

Select this component when designing circuits requiring high linearity and moderate power output within the 50 MHz to 6 GHz range. It is suitable for base station transmit drivers or receive chain LNAs where OIP3 and P1dB are critical parameters. Ensure the design accommodates a single positive power supply due to its enhancement mode architecture.

Part Context

The ATF-521P8 belongs to the family of enhancement mode pseudomorphic HEMTs developed for RF power amplifier applications. It utilizes a 2x2 mm LPCC package compliant with JEDEC outline MO229. The device is manufactured using process technologies optimized for high linearity and thermal efficiency in wireless communication systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative components based on matching package dimensions, electrical specifications, and thermal requirements.

FAQ

What is the operational gate voltage requirement?

The device requires a single positive gate voltage. At Vds = 4.5V and Ids = 200 mA, the typical operational gate voltage is 0.62 V.

How does the package facilitate thermal management?

The 2x2 mm LPCC package features backside metalization which provides excellent thermal dissipation and serves as visual evidence of solder reflow.

What is the Linearity Figure of Merit (LFOM)?

The LFOM is defined as the Output Third-Order Intercept Point (OIP3) divided by the DC bias power. For the ATF-521P8, the typical LFOM is 12.5 dB.

ATF-521P8-BLKATF-521P8-BLK

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