ATF-53189-BLK

Overview

The ATF-53189-BLK is an Enhancement Mode Pseudomorphic HEMT (E-pHEMT) FET manufactured by Broadcom Limited, housed in a standard SOT-89 surface-mount package. Designed for high-linearity and low-noise applications, it operates across a frequency range of 50 MHz to 6 GHz. At a typical bias of 4.0V and 135 mA, the device delivers a gain of 15.5 dB, an output IP3 of 40.0 dBm, and a noise figure of 0.85 dB at 2 GHz. It features single-voltage operation, eliminating the need for negative gate voltages, and includes lead-free construction with MSL-2 reliability ratings.

Feature Summary

• Single positive gate voltage operation eliminates the requirement for negative bias supplies associated with conventional depletion mode devices.
• High linearity combined with low noise figure makes the component suitable for medium-power amplification tasks.
• Manufactured using E-pHEMT technology within a cost-effective SOT-89 standard surface mount package.

Applications

• Front-end Low Noise Amplifier (LNA) stages Q1 and Q2 for Cellular/PCS and WCDMA wireless infrastructure
• Driver or Pre-driver Amplifier functions within Cellular/PCS and WCDMA wireless infrastructure systems
• Driver Amplifier applications for WLAN, WLL/RLL, and MMDS communication systems

Procurement Notes

Verify that the ordering suffix -BLK corresponds to the specific tape-and-reel packaging option documented in the official datasheet. Confirm that the component retains the lead-free status and MSL-2 classification specified by the manufacturer. Ensure the part number matches the exact enhancement mode pseudomorphic HEMT specifications provided in the public documentation before procurement.

Selection Notes

Select this component when designing circuits requiring a single-voltage supply solution without negative gate bias generation. The device is appropriate for applications demanding high linearity and low noise figures across the 50 MHz to 6 GHz spectrum. Consider the SOT-89 package dimensions and thermal characteristics during PCB layout to ensure optimal performance and heat dissipation for the intended power levels.

Part Context

The ATF-53189 belongs to a family of single-voltage E-pHEMT FETs designed to simplify the upgrade of base stations to higher channel capacities. Manufactured originally by Agilent Technologies and subsequently by Avago/Broadcom, these components are engineered for wireless infrastructure. The device represents a transition from traditional depletion mode technologies to enhancement mode architectures for simplified biasing requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs if considering alternative enhancement mode HEMTs, as pinouts and electrical characteristics may differ significantly between manufacturers.