ATF-53189-TR1

Overview

The ATF-53189 is an enhancement mode pseudomorphic HEMT (E-pHEMT) FET packaged in a surface-mount SOT-89 enclosure. Designed for high linearity and low noise applications, it operates from 50 MHz to 6 GHz. At a standard bias of Vds = 4.0V and Ids = 135 mA, the device delivers a typical gain of 15.5 dB, a noise figure of 0.85 dB at 2.0 GHz, and an output power at 1dB compression (P1dB) of 23.0 dBm. The Output Third-Order Intercept Point (OIP3) reaches 40.0 dBm at 2.0 GHz, with a Power Added Efficiency (PAE) of 46% under these conditions.

Feature Summary

• Single positive gate voltage operation eliminates the need for negative gate bias associated with depletion mode devices.
• High linearity performance combined with low noise figure suitable for medium-power amplification.
• Robust reliability characterized by a point Mean Time To Failure (MTTF) exceeding 300 years.

Applications

• Front-end Low Noise Amplifier (LNA) stages Q1 and Q2 for Cellular/PCS and WCDMA wireless infrastructure.
• Driver or pre-driver amplifier for WLAN, WLL/RLL, and MMDS applications.
• General-purpose discrete E-pHEMT amplifier requiring medium power and high linearity.

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package orientation markings match the datasheet pinout: Drain on Pin 1, Source on Pin 2, and Gate on Pin 3. Ensure storage and handling comply with MSL-2 moisture sensitivity levels and lead-free manufacturing standards.

Selection Notes

Select this component when single-voltage operation is required without negative gate supplies. It is appropriate for designs needing high linearity (OIP3) and low noise figures in the cellular and PCS frequency bands. Verify thermal management capabilities against the specified channel-to-board thermal resistance of 70°C/W.

Part Context

This device belongs to the Broadcom Limited RF microwave portfolio, specifically utilizing pseudomorphic High Electron Mobility Transistor (pHEMT) technology. It serves as a discrete active component for radio frequency signal chain implementations, bridging the gap between low-noise front-end reception and driver stage transmission requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative E-pHEMT devices based on matching SOT-89 footprint, DC bias requirements, and RF performance metrics at target frequencies.