ATF-531P8-TR2

Overview

The ATF-531P8 is a single-voltage high linearity, low noise enhancement mode pseudomorphic HEMT (E-pHEMT) designed for medium-power amplification. It operates within a frequency range of 50 MHz to 6 GHz and utilizes an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC) package measuring 2.0 x 2.0 x 0.75 mm. At a standard bias of Vds = 4V and Ids = 135 mA at 2 GHz, the device provides a typical gain of 20 dB, a noise figure of 0.6 dB, and an output third-order intercept point (OIP3) of 38 dBm. The component supports tape-and-reel packaging options.

Feature Summary

• Single positive gate voltage operation eliminates the need for negative gate bias associated with depletion mode devices.
• Thermally efficient backside metalization in the LPCC package ensures excellent thermal dissipation and visual solder reflow evidence.
• High product consistency distribution across key RF parameters including noise figure, gain, and OIP3.

Applications

• Front-end Low Noise Amplifier (LNA) or driver/pre-driver amplifier for Cellular/PCS and WCDMA wireless infrastructure
• Driver amplifier for WLAN, WLL/RLL, and MMDS applications
• General purpose discrete E-pHEMT for other high linearity applications

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The datasheet lists ATF-531P8-TR1 (3000 units on a 7-inch reel) and ATF-531P8-TR2 (10000 units on a 13-inch reel). Confirm that the requested suffix matches the required container size and quantity to ensure compatibility with automated assembly equipment.

Selection Notes

Select this component when a single-voltage supply is preferred over dual-supply architectures requiring negative gate voltages. Evaluate performance requirements at specific frequencies, as gain decreases from approximately 25 dB at 900 MHz to lower values at higher frequencies. Ensure the design accommodates the 2x2 mm LPCC package dimensions and utilizes the bottom thermal pad for effective heat dissipation.

Part Context

The ATF-531P8 belongs to the ATF-531xx series of pseudomorphic HEMTs manufactured by Broadcom Limited (formerly Avago Technologies). These devices are engineered for RF front-end modules where high linearity and low noise are critical. The technology leverages enhancement mode characteristics to simplify biasing circuits compared to traditional depletion mode alternatives.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Designers should consult manufacturer application notes or cross-reference databases for potential replacements, ensuring that pinout compatibility, package dimensions, and electrical specifications match the original requirements.

FAQ

What is the operational gate voltage requirement for the ATF-531P8?

The device employs enhancement mode technology, requiring a single positive Vgs. At a drain-source voltage of 4V and drain current of 135 mA, the typical operational gate voltage is 0.68 V.

How does the package design assist in manufacturing verification?

The LPCC package features backside metalization that provides excellent thermal dissipation and serves as visual evidence of proper solder reflow during the assembly process.

What is the maximum allowable drain-source voltage?

According to the absolute maximum ratings, the maximum Drain-Source Voltage (VDS) is 7 V.