ATF-54143-BLKG

Overview

The Broadcom ATF-54143-BLKG is a low noise, high dynamic range enhancement mode pseudomorphic HEMT (E-PHEMT) housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. Designed for operation within the 450 MHz to 6 GHz frequency range, this component combines high gain, high linearity, and low noise characteristics. Typical specifications at 2 GHz with a 3V supply and 60 mA drain current include an associated gain of 16.6 dB, a noise figure of 0.5 dB, an output power at 1 dB gain compression of 20.4 dBm, and an output third-order intercept point of 36.2 dBm.

Feature Summary

• Enhancement Mode Technology requiring positive Vgs, eliminating the need for negative gate voltage associated with conventional depletion mode devices
• High linearity performance combined with low noise figure for signal integrity
• Excellent uniformity in product specifications ensuring consistent performance across units
• 800 micron gate width optimized for RF amplification applications

Applications

• Low noise amplifier for cellular/PCS base stations
• LNA for WLAN, WLL/RLL, and MMDS applications
• General purpose discrete noise applications

Procurement Notes

Verify the specific BLKG suffix against official Broadcom documentation to confirm exact packaging or environmental compliance details. Ensure ESD precautions are observed during handling, as the device is sensitive to electrostatic discharge. Confirm availability status as component lifecycles may change, and check for lead-free options if required by regulatory standards.

Selection Notes

Select the ATF-54143-BLKG when designing circuits requiring low noise and high linearity in the 450 MHz to 6 GHz range. The SOT-343 package suits space-constrained designs. Consider the requirement for positive Vgs bias due to its enhancement mode nature, which differs from standard depletion mode LNAs. Evaluate thermal dissipation capabilities given the small plastic package size.

Part Context

The ATF-54143 series represents Broadcom's (formerly Avago) solution for RF front-end modules requiring compact form factors. It utilizes pHEMT technology to deliver superior noise and linearity metrics compared to standard GaAs FETs. This component is part of a broader portfolio of RF transistors designed for wireless infrastructure and mobile communication systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing bias networks due to the enhancement mode architecture.