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The ATF-541M4-TR1 is a single N-channel GaAs pHEMT RF transistor manufactured by Broadcom Limited. Designed for high-frequency applications, it operates up to 2 GHz with a typical gain of 17.5 dB and a noise figure of 0.5 dB. Key electrical parameters include a drain-source breakdown voltage (Vds) of 5 V, a continuous drain current (Id) of 120 mA, and a power dissipation (Pd) of 360 mW. The device features a P1dB compression point of 21.4 dBm and a minimum forward transconductance of 398 mmho. It is housed in a MiniPAK surface-mount package and supports operation at temperatures up to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to the part's obsolete status. Confirm RoHS compliance details via official documentation before integration. Ensure supply chain sources provide valid traceability records to mitigate risks associated with end-of-life components.
Select this component for designs requiring a 5V operating voltage and specific 2 GHz performance characteristics. Evaluate thermal management requirements given the 360 mW dissipation limit in the MiniPAK package. Compare against newer alternatives if long-term availability is critical for production lifecycles.
This component belongs to the Broadcom RF JFET transistor family, specifically utilizing GaAs technology. It serves as a specialized discrete semiconductor solution for radio frequency amplification tasks within broader electronic systems.
Publicly confirmed substitute part numbers are not available in the provided data. Engineers should consult official Broadcom obsolescence notices or technical support for validated replacement recommendations.