ATF-541M4-TR2

ATF-541M4-TR2

  • Description:RF MOSFET PHEMT FET 3V MINIPAK
  • Series:-

SKU:24a221408c9a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 3V MINIPAK
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:2GHz
  • Gain:17.5dB
  • Voltage - Test:3 V
  • Current Rating (Amps):120mA
  • Noise Figure:0.5dB
  • Current - Test:60 mA
  • Power - Output:21.4dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:0505 (1412 Metric)
  • Supplier Device Package:MiniPak 1412
  • Configuration:-

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ATF-541M4-TR2

Overview

The ATF-541M4-TR2 is a single N-channel EpHEMT RF transistor manufactured by Broadcom Limited using Gallium Arsenide (GaAs) technology. Designed for surface-mount applications in the Mini PAK package, it operates up to 2 GHz with a typical gain of 17.5 dB and a noise figure of 0.5 dB. Key electrical specifications include a drain-source breakdown voltage of 5 V, continuous drain current of 120 mA, and power dissipation of 360 mW. The device features a minimum forward transconductance of 398 mmho and a 1 dB compression point of 21.4 dBm.

Feature Summary

  • Utilizes GaAs EpHEMT technology for high-frequency performance
  • Provides low noise figure suitable for sensitive receiver stages
  • Offers high gain with minimal signal attenuation
  • Compact Mini PAK surface-mount packaging

Applications

  • Low-noise amplifier (LNA) circuits
  • RF front-end modules
  • Wireless communication systems operating up to 2 GHz

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance details via official documentation before integration. Ensure storage conditions meet moisture sensitivity level requirements to prevent package damage during soldering processes.

Selection Notes

Select this component for designs requiring GaAs-based amplification with specific 5 V drain-source voltage constraints. Evaluate thermal management capabilities against the 360 mW power dissipation limit. Compare noise figure and gain metrics against alternative devices if operation extends beyond 2 GHz or requires different package footprints.

Part Context

This part belongs to the ATF-541 series of GaAs field-effect transistors originally developed by Agilent Technologies and later maintained by Broadcom Limited following corporate acquisitions. The series includes variants such as the ATF-541M4-BLK, sharing similar core technologies but differing in packaging or testing configurations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official Broadcom obsolescence notices or technical support for validated replacement recommendations.

ATF-541M4-TR2ATF-541M4-TR2

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