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The ATF-541M4-TR2 is a single N-channel EpHEMT RF transistor manufactured by Broadcom Limited using Gallium Arsenide (GaAs) technology. Designed for surface-mount applications in the Mini PAK package, it operates up to 2 GHz with a typical gain of 17.5 dB and a noise figure of 0.5 dB. Key electrical specifications include a drain-source breakdown voltage of 5 V, continuous drain current of 120 mA, and power dissipation of 360 mW. The device features a minimum forward transconductance of 398 mmho and a 1 dB compression point of 21.4 dBm.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance details via official documentation before integration. Ensure storage conditions meet moisture sensitivity level requirements to prevent package damage during soldering processes.
Select this component for designs requiring GaAs-based amplification with specific 5 V drain-source voltage constraints. Evaluate thermal management capabilities against the 360 mW power dissipation limit. Compare noise figure and gain metrics against alternative devices if operation extends beyond 2 GHz or requires different package footprints.
This part belongs to the ATF-541 series of GaAs field-effect transistors originally developed by Agilent Technologies and later maintained by Broadcom Limited following corporate acquisitions. The series includes variants such as the ATF-541M4-BLK, sharing similar core technologies but differing in packaging or testing configurations.
Publicly confirmed substitute part numbers are not available in the provided source data. Engineers should consult official Broadcom obsolescence notices or technical support for validated replacement recommendations.