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The ATF-55143-BLKG is a single N-channel EpHEMT RF transistor manufactured by Broadcom Limited using Gallium Arsenide (GaAs) technology. Designed for high-frequency applications, it operates at a frequency of 2 GHz with a gain of 17.7 dB and a noise figure of 0.6 dB. The device features a drain-source breakdown voltage of 5 V and supports a continuous drain current of 100 mA. It has a power dissipation rating of 270 mW and a P1dB compression point of 14.4 dBm. The component is housed in an SOT-343 surface-mount package and is rated for maximum operating temperatures up to +150°C.
Verify the obsolete status and end-of-life notifications before procurement planning. Confirm availability through authorized distributors as stock may be limited or restricted. Ensure compliance with RoHS standards and check specific shipping restrictions for your region prior to ordering.
Select this component for designs requiring a 2 GHz GaAs FET with a 0.6 dB noise figure. Ensure the circuit can accommodate the 270 mW power dissipation limit and the SOT-343 package dimensions. Verify that the 5 V drain-source voltage rating aligns with the system's power supply constraints.
This part belongs to the ATF series of RF transistors from Broadcom, specifically utilizing EpHEMT technology. It is distinct from other ATF models by its specific 2 GHz frequency target and 0.6 dB noise figure specification. The BLKG suffix typically denotes a specific tape-and-reel packaging configuration for automated assembly.
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the obsolete status, direct replacements should be evaluated based on matching electrical parameters such as 2 GHz operation, 0.6 dB noise figure, and SOT-343 packaging.