ATF-55143-TR1

ATF-55143-TR1

$0.56
  • Description:RF MOSFET E-PHEMT 2.7V SOT343
  • Series:-

SKU:cc1183f9a43c Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET E-PHEMT 2.7V SOT343
  • Series:-
  • Mfr:Broadcom Limited
  • Package:Tape & Reel (TR)
  • Technology:E-pHEMT
  • Frequency:2GHz
  • Gain:17.7dB
  • Voltage - Test:2.7 V
  • Current Rating (Amps):100mA
  • Noise Figure:0.6dB
  • Current - Test:10 mA
  • Power - Output:14.4dBm
  • Voltage - Rated:5 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:SOT-343
  • Configuration:-

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ATF-55143-TR1

Overview

The ATF-55143-TR1 is a low noise enhancement mode pseudomorphic HEMT (E-PHEMT) housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. It operates within the 450 MHz to 6 GHz frequency range and utilizes single supply technology, eliminating the need for negative gate voltage biasing. Key electrical specifications at 2 GHz with VDS = 2.7V and IDS = 10 mA include an associated gain of 17.7 dB, a noise figure of 0.6 dB, an output third-order intercept point (OIP3) of 24.2 dBm, and a 1 dB gain compression output power (P1dB) of 14.4 dBm.

Feature Summary

  • High linearity performance combined with very low noise figure
  • Single supply enhancement mode technology requiring positive Vgs
  • Excellent uniformity in product specifications across production wafers

Applications

  • Low noise amplifier for cellular/PCS handsets
  • LNA for WLAN, WLL/RLL and MMDS applications
  • General purpose discrete E-PHEMT for other ultra low noise applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details. The TR1 suffix typically indicates tape and reel packaging, but official datasheets must be consulted to ensure compatibility with automated assembly processes and to validate any lead-free or environmental compliance markings associated with this specific variant.

Selection Notes

Select this component when designing circuits for frequencies between 450 MHz and 6 GHz that require high dynamic range and minimal signal degradation. The enhancement mode architecture simplifies bias network design by removing the requirement for negative gate voltages. Ensure the thermal management strategy accounts for the specified maximum channel temperature and power dissipation limits under intended operating conditions.

Part Context

This device belongs to the ATF-55143 family of low noise pseudomorphic HEMTs originally developed by Agilent Technologies and later manufactured by Broadcom Limited. The standard ATF-55143 is available in bulk packaging, while the -TR1 suffix specifically denotes the tape and reel configuration suitable for high-volume surface mount manufacturing lines.

Replacement Considerations

Direct replacements may include the ATF-55143-BLK or ATF-55143-BLKG variants which share identical electrical characteristics but differ in packaging format. Verify pinout compatibility and thermal resistance values before substitution.

ATF-55143-TR1ATF-55143-TR1
$0.56
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