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The ATF-55143-TR2G is a single-channel RF JFET transistor manufactured by Broadcom Limited using GaAs technology. It features an EpHEMT structure with N-Channel polarity, designed for operation up to 2 GHz. Key electrical parameters include a gain of 17.7 dB, a noise figure of 0.6 dB, and a P1dB compression point of 14.4 dBm. The device supports a maximum drain-source voltage of 5 V and continuous drain current of 100 mA, with power dissipation rated at 270 mW. It operates within a temperature range up to +150°C and is housed in an SOT-343 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels due to obsolete status. Confirm RoHS compliance details via official documentation. Check for Product Change Notices (PCN) or End-of-Life (EOL) notifications from Broadcom to assess long-term availability risks before finalizing design integration.
Select this component when a GaAs-based RF JFET with specific 2 GHz performance characteristics is required. Ensure the design accommodates the SOT-343 footprint and thermal constraints associated with 270 mW power dissipation. Compare against other Broadcom RF transistors if different frequency ranges or packaging options are needed for the target application.
This part belongs to Broadcom's portfolio of radio frequency discrete components, specifically within the RF JFET Transistors category. It shares the SOT-343 package form factor with other Broadcom RF devices like the ADA-4543-TR2G and MGA-53543-TR2G, though internal technologies and specifications differ significantly based on the underlying semiconductor material and intended frequency band.
Publicly confirmed substitute part numbers are not available in the provided source data. Designers should consult Broadcom's official obsolescence notices or engineering support for validated replacement recommendations.