ATF-58143-TR2G

Overview

The ATF-58143-TR2G is a low noise enhancement mode pseudomorphic HEMT (E-PHEMT) manufactured by Broadcom Limited. It operates at a frequency of 2 GHz with a typical supply voltage of 3 V and current of 30 mA. Key electrical parameters include a noise figure of 0.5 dB, associated gain of 16.5 dB, output power at 1 dB compression of 19 dBm, and a third-order intercept point of 30.5 dBm. The device is housed in a 4-lead SC-70 (SOT-343) surface mount plastic package.

Feature Summary

• Enhancement Mode Technology for simplified biasing
• Low noise and high linearity performance
• Excellent uniformity in product specifications

Applications

• Q1 LNA for cellular/PCS/WCDMA base stations
• Q1, Q2 LNA and Pre-driver amplifier for 3–4 GHz WLL
• Low noise and high linearity applications at 450 MHz to 6 GHz

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for End-of-Life notices or Product Change Notifications prior to procurement. Ensure the specific suffix matches the required tape-and-reel packaging configuration.

Selection Notes

Select this component for designs requiring minimal noise figure and high dynamic range in the 450 MHz to 6 GHz spectrum. The E-PHEMT technology allows for efficient operation at low voltages. Verify that the SOT-343 package dimensions fit the PCB layout constraints and thermal requirements of the target application.

Part Context

This part belongs to the ATF series of RF transistors from Broadcom Limited, formerly Agilent Technologies. It is designed as a surface-mount solution for wireless communication infrastructure. The TR2G suffix indicates the specific tape-and-reel packaging format used for automated assembly processes.

Replacement Considerations

Consult official replacement lists for verified substitutes. Generic equivalents may not match the specific noise figure or linearity characteristics required for base station front-end applications.