AUIRF3205

$3.93

Description：MOSFET N-CH 55V 75A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:8958d1da1472 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRF3205 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 75A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRF3205

Description：MOSFET N-CH 55V 75A TO220AB
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：146 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3247 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for AUIRF3205

AUIRF3205

Single FETs, MOSFETs Overview

The AUIRF3205 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 55V and a continuous drain current of 75A at case temperature of 25°C, limited by the package. The device exhibits a maximum on-resistance of 8.0mΩ at VGS=10V. Key electrical parameters include a total gate charge of 146nC, turn-on delay time of 14ns, rise time of 101ns, turn-off delay time of 50ns, and fall time of 65ns. Thermal characteristics specify a junction-to-case resistance of 0.75°C/W maximum and junction-to-ambient resistance of 62°C/W maximum.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards for reliability in vehicle environments.
Stripe planar design technology optimized to achieve low on-resistance per silicon area.
Ruggedized device construction providing fast switching speed and high avalanche energy capability.

Single FETs, MOSFETs Applications

Automotive power management systems
High-side and low-side switching circuits
DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the complete part number includes the 'AU' prefix to ensure automotive grade qualification. Confirm the package type is TO-220AB tube packaging as specified in the ordering information. Check RoHS compliance status against current regulatory requirements for your specific region and application constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring AEC-Q101 certification. Ensure thermal management strategies account for the 0.75°C/W junction-to-case resistance. Verify that the 55V breakdown voltage and 75A package-limited current meet the circuit's peak operational demands without exceeding absolute maximum ratings.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). It utilizes advanced processing techniques to enhance performance metrics such as on-resistance and switching speed compared to standard industrial counterparts.